Title :
C-and X-band switch MMIC´s based on heterostructure pin-diodes
Author :
Yushchenko, A.Y. ; Ayzenshtat, G.I. ; Monastyrev, E.A. ; Bozhkov, V.G.
Author_Institution :
Res. Inst. of Semicond. Devices, Tomsk, Russia
Abstract :
This paper presents the results of development of C-and X-band switch MMIC´s based on heterostructure pin-diodes. The circuits are characterized by the low insertion loss and good insulation in the working frequency band.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; microwave switches; p-i-n diodes; AlGaAs-GaAs; C-band switch MMIC; X-band switch MMIC; heterostructure pin-diodes; insertion loss; insulation; Gallium arsenide; Insertion loss; Insulation; MMICs; Semiconductor diodes; Switches;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
