• DocumentCode
    2222569
  • Title

    C-and X-band switch MMIC´s based on heterostructure pin-diodes

  • Author

    Yushchenko, A.Y. ; Ayzenshtat, G.I. ; Monastyrev, E.A. ; Bozhkov, V.G.

  • Author_Institution
    Res. Inst. of Semicond. Devices, Tomsk, Russia
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    169
  • Lastpage
    170
  • Abstract
    This paper presents the results of development of C-and X-band switch MMIC´s based on heterostructure pin-diodes. The circuits are characterized by the low insertion loss and good insulation in the working frequency band.
  • Keywords
    III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; microwave switches; p-i-n diodes; AlGaAs-GaAs; C-band switch MMIC; X-band switch MMIC; heterostructure pin-diodes; insertion loss; insulation; Gallium arsenide; Insertion loss; Insulation; MMICs; Semiconductor diodes; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6068885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2222569