DocumentCode :
2222582
Title :
Electronic states of ordered and disordered thin Co2MnSi films for spintronics applications
Author :
Bittar, A. ; Williams, G.V.M. ; Strickland, N. ; Grigorescu, C. ; Monnereau, O. ; Tortet, L. ; Autric, M. ; Valerio, E. ; Trodahl, H.J. ; Granville, S. ; Ruck, B.
Author_Institution :
Ind. Res., Wellington
fYear :
2006
fDate :
3-7 July 2006
Abstract :
The authors have measured the magnetic and optical properties of single phase Co2MnSi epitaxial films produced by pulsed laser deposition on gallium arsenide substrates at various temperatures. The intrinsic atomic disorder is shown to result in profound changes in the magnetic moment, Curie temperature and half metallic properties of the films. Specifically, with increased disorder, the majority carrier numbers decrease rapidly and disappear, the minority bandgap edge moves to lower values (0.18eV vs 1.8eV) and the optical conductivity shows features typical of a narrow bandgap semiconductor
Keywords :
Curie temperature; cobalt compounds; gallium arsenide; magnetoelectronics; manganese compounds; narrow band gap semiconductors; optical properties; pulsed laser deposition; semiconductor epitaxial layers; Co2MnSi; Curie temperature; Heuslers; electronic states; half metallic properties; intrinsic atomic disorder; magnetic moment; magnetic properties; minority bandgap edge; narrow bandgap semiconductor; optical properties; pulsed laser deposition; single phase epitaxial films; spintronics applications; thin films; Atom optics; Magnetic films; Magnetic properties; Optical films; Optical pulses; Phase measurement; Photonic band gap; Pulse measurements; Pulsed laser deposition; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0453-3
Electronic_ISBN :
1-4244-0453-3
Type :
conf
DOI :
10.1109/ICONN.2006.340629
Filename :
4143409
Link To Document :
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