Near-field autocorrelation spectroscopy of disordered nanostructures

Author

Intonti ; Guenther, Thomas ; Emiliani ; Lienau, Christoph ; Elsaesser, Thomas

Author_Institution

Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany

fYear

2002

fDate

19-24 May 2002

Firstpage

41

Lastpage

42

Abstract

Summary form only given. In this report, we compare near-field autocorrelation spectra of localized excitons in thin [311]A and [100] GaAs quantum wells (QW). The spectra on a [311]A GaAs QW display clear signatures of level repulsion in a random potential characterized by a single correlation length. The distinctly different spectra on [100] GaAs QWs reveal pronounced correlations between ground and higher exciton states in large, disordered islands.

Keywords

III-V semiconductors; excitons; gallium arsenide; island structure; photoluminescence; semiconductor quantum wells; GaAs; PL spectra; Schrodinger equation; blue shift; disordered nanostructures; ground states; interface fluctuations; large disordered islands; level repulsion; localized excitons; near-field autocorrelation spectra; near-field probe; quantum wells; random potential; short range potential fluctuations; single correlation length; statistical short range fluctuations; two-energy autocorrelation function; Excitons; Gallium compounds; Photoluminescence; Quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031061

Filename

1031061