Title :
Near-field autocorrelation spectroscopy of disordered nanostructures
Author :
Intonti ; Guenther, Thomas ; Emiliani ; Lienau, Christoph ; Elsaesser, Thomas
Author_Institution :
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
Abstract :
Summary form only given. In this report, we compare near-field autocorrelation spectra of localized excitons in thin [311]A and [100] GaAs quantum wells (QW). The spectra on a [311]A GaAs QW display clear signatures of level repulsion in a random potential characterized by a single correlation length. The distinctly different spectra on [100] GaAs QWs reveal pronounced correlations between ground and higher exciton states in large, disordered islands.
Keywords :
III-V semiconductors; excitons; gallium arsenide; island structure; photoluminescence; semiconductor quantum wells; GaAs; PL spectra; Schrodinger equation; blue shift; disordered nanostructures; ground states; interface fluctuations; large disordered islands; level repulsion; localized excitons; near-field autocorrelation spectra; near-field probe; quantum wells; random potential; short range potential fluctuations; single correlation length; statistical short range fluctuations; two-energy autocorrelation function; Excitons; Gallium compounds; Photoluminescence; Quantum wells;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031061
