• DocumentCode
    2222595
  • Title

    Use of modified operating mode of gallium arsenid Gunn diodes in the 35–47 GHz millimetre-range generators

  • Author

    Torkhov, N.A. ; Bozhkov, V.G. ; Perfilev, V.A. ; Zolotov, S.E. ; Petrov, I.V. ; Burmistrova, V.A. ; Kozlova, A.V.

  • Author_Institution
    Sci.-Res. Inst. of Semicond., Tomsk, Russia
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    171
  • Lastpage
    172
  • Abstract
    Impedance and operating temperature of Gunn diodes (GD) used in the modified mode (MM) are the same as in the transit-time mode. The MM may be realized in GD with the thin base layer (L<;1.5μm), where the value of strong field domain equates, or exceeds, the base length. Extended frequency range and high efficiency of GD working in MM have allowed using GD efficiently in the following types of GD generators (GDG): GDG with output frequency Fout=35 GHz (with tuning range 1 GHz) with output power Pout>;120 mW, Ioper=0.5-0.55 A and Uoper=4.5-5 V; GDG with Fout= 37 GHz with Pout>;140 mW, Ioper<;0.7A and Uoper<;6 V; and GDG with Fout=47 GHz with Pout>;100 mW, Ioper=0.5-0.55 A and Uoper=4.5-5 V.
  • Keywords
    Gunn diodes; III-V semiconductors; gallium arsenide; millimetre wave diodes; GD generators; GaAs; current 0.5 A to 0.55 A; frequency 1 GHz to 47 GHz; gallium arsenide Gunn diodes; millimetre-range generators; modified operating mode; voltage 4.5 V to 5 V; Electronic mail; Gallium arsenide; Generators; Power generation; Semiconductor diodes; Temperature measurement; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6068886