Title :
Performance Analysis of MISISFET
Author :
Sarkar, Angik ; Bhattacharyya, T.K.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Kharagpur
Abstract :
The performance of nano MISISFET (metal insulator semiconductor insulator semiconductor field effect transistor) has been evaluated. The threshold voltage is same for MISISFET and a MOSFET of equivalent dielectric capacitance. The AC characteristics of MISISFET and MOSFET are also compared. No evidence of charge storage in the dielectric stack layer of MISISFET is found
Keywords :
CMOS integrated circuits; MOSFET; capacitance; tunnelling; AC characteristics; MOSFET; dielectric stack layer; direct tunneling; equivalent dielectric capacitance; gate leakage; metal insulator semiconductor insulator semiconductor field effect transistor; nanoCMOS; nanoMISISFET; performance analysis; threshold voltage; CMOS technology; Dielectric devices; Dielectrics and electrical insulation; Electrons; Energy states; FETs; MOSFET circuits; Metal-insulator structures; Performance analysis; Tunneling;
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0453-3
Electronic_ISBN :
1-4244-0453-3
DOI :
10.1109/ICONN.2006.340632
