DocumentCode :
2222808
Title :
Comparison of Si and GaAs schottky detectors
Author :
Varlashov, I.B. ; Shnitnikov, A.S. ; Gudkova, N.B.
Author_Institution :
Moscow Power Eng. Inst. (Tech. Univ.), Moscow, Russia
fYear :
2011
fDate :
12-16 Sept. 2011
Firstpage :
189
Lastpage :
190
Abstract :
Comparative investigation of Si and GaAs microwave detector diodes has been carried out.
Keywords :
III-V semiconductors; Schottky diodes; elemental semiconductors; gallium arsenide; microwave detectors; silicon; GaAs; Schottky detector diode; Si; microwave detector diode; Analytical models; Detectors; Gallium arsenide; Schottky diodes; Sensitivity; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
Type :
conf
Filename :
6068894
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2222808
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