Title :
Quantum dots-in-a-well infrared photodetectors grown by MOCVD
Author :
Jolley, G. ; Lan Fu ; Hoe Tan, H. ; Jagadish, C. ; Vukmirovic, N. ; Harrison, Peter
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2 109 cmHz/W has been achieved at a temperature of 77K. In an effort to understand the spectral behavior of the characterized devices band structure modeling has been performed.
Keywords :
MOCVD coatings; band structure; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; 77 K; InGaAs-GaAs; MOCVD; band structure modeling; infrared photodetectors; quantum dots-in-a-well; spectral behavior; Chemical vapor deposition; Fabrication; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical materials; Optical scattering; Photodetectors; Quantum dots; Temperature;
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0452-5
Electronic_ISBN :
1-4244-0452-5
DOI :
10.1109/ICONN.2006.340642
