• DocumentCode
    2222849
  • Title

    Quantum dots-in-a-well infrared photodetectors grown by MOCVD

  • Author

    Jolley, G. ; Lan Fu ; Hoe Tan, H. ; Jagadish, C. ; Vukmirovic, N. ; Harrison, Peter

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
  • fYear
    2006
  • fDate
    3-7 July 2006
  • Abstract
    The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2 109 cmHz/W has been achieved at a temperature of 77K. In an effort to understand the spectral behavior of the characterized devices band structure modeling has been performed.
  • Keywords
    MOCVD coatings; band structure; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; 77 K; InGaAs-GaAs; MOCVD; band structure modeling; infrared photodetectors; quantum dots-in-a-well; spectral behavior; Chemical vapor deposition; Fabrication; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical materials; Optical scattering; Photodetectors; Quantum dots; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
  • Conference_Location
    Brisbane, Qld.
  • Print_ISBN
    1-4244-0452-5
  • Electronic_ISBN
    1-4244-0452-5
  • Type

    conf

  • DOI
    10.1109/ICONN.2006.340642
  • Filename
    4143422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2222849