Title :
Q-band low-noise receiver module with protection on synchronous and nonsynchronous incident signals up to 1000 W impulse power
Author :
Kirillov, A.V. ; Smirnov, V.A. ; Usov, A.A. ; Shifman, R.G.
Author_Institution :
Joint-Stock Co. Svetlana-Electronpribor, St. Petersburg, Russia
Abstract :
The design results of the solid-state Q-band low-noise receiver module with protection on synchronous and non-synchronous incident signals up to 1000 W impulse power are given. A bandwidth of the module is 6%, gain - 18 dB, noise factor - 4.6 dB, operating time - 0.2 μs.
Keywords :
attenuators; low noise amplifiers; semiconductor devices; gain 18 dB; impulse power; noise figure 4.6 dB; nonsynchronous incident signal protection; solid-state Q-band low-noise receiver module; synchronous incident signal protection; time 0.2 mus; Attenuators; Gain; Gallium arsenide; Noise; PIN photodiodes; Receivers; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
