Title :
Solid-state autonomous semiconductor 8-mm wave length power limiter designed for operation at input pulsed power up to 1 KW
Author :
Kirillov, A.V. ; Smirnov, V.A. ; Usov, A.A.
Author_Institution :
Joint-Stock Co. Svetlana-Electronnpribor, St. Petersburg, Russia
Abstract :
The results of development of the autonomous semiconductor 8-mm wave length power limiter based on p-i-n - diodes matrix on Si and GaAs are presented. The device provides capacity for operation at input power up to 1 kW and at impulse power value over 0.7 W and response speed about 0.2 μs.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; limiters; p-i-n diodes; power semiconductor devices; silicon; GaAs; Si; impulse power value; input pulsed power; p-i-n- diode matrix; solid-state autonomous semiconductor wavelength power limiter; wavelength 8 mm; Companies; Electronic mail; Gallium arsenide; P-i-n diodes; PIN photodiodes; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
