Title :
Integration of Quantum Dot devices by Selective Area Epitaxy
Author :
Mokkapati, S. ; Tan, H.H. ; Jagadish, C. ; McBean, K.E. ; Phillips, M.R.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; laser tuning; nucleation; quantum dot lasers; quantum well lasers; semiconductor growth; silicon alloys; InAs; InGaAs; integrated optoelectronic devices; nucleation; quantum dot devices; quantum dot laser; quantum well waveguide; selective area epitaxy; Atomic force microscopy; Dielectric substrates; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Laser theory; Quantum dot lasers; Quantum dots; Quantum well lasers; Transmission electron microscopy;
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0453-3
Electronic_ISBN :
1-4244-0453-3
DOI :
10.1109/ICONN.2006.340648
