Title :
Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells
Author :
Joyce, Hannah J. ; Kim, Y. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs radial heterostructure nanowires, fabricated by metalorganic chemical vapour deposition. The effect of growth temperature on nanowire morphology is discussed. Strong photoluminescence is observed from GaAs nanowires with AlGaAs shells. Core/multishell nanowires, of GaAs cores clad in several alternating layers of thick AlGaAs barrier shells and thin GaAs quantum well shells, exhibit a blue-shifted photoluminescence peak believed to arise from quantum confinement effects. A novel two-temperature growth procedure for obtaining GaAs cores is introduced, and other nanowire heterostructures are addressed.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; nanowires; photoluminescence; semiconductor quantum wells; AlGaAs barrier shells; AlGaAs shells; GaAs cores; GaAs quantum well shells; GaAs-AlGaAs; GaAs/AlGaAs nanowires; core/shell nanowires; metalorganic chemical vapour deposition; nanowire morphology; optical properties; photoluminescence; quantum confinement effects; radial heterostructure nanowires; structural properties; Chemical vapor deposition; Gallium arsenide; Gold; Indium gallium arsenide; MOCVD; Nanoparticles; Nanowires; Photoluminescence; Substrates; Temperature;
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0452-5
Electronic_ISBN :
1-4244-0452-5
DOI :
10.1109/ICONN.2006.340650