DocumentCode :
2223099
Title :
The Extraction of HEMT Transistor DC Parameters Using the Transistor Electrical Characterization and Analysis Program (TECAP)
Author :
Friedrich, R. ; Rhakzar, H.
Author_Institution :
Fachhochschule fuer Technik (Esslingen Polytechnic)
fYear :
1990
fDate :
23-23 April 1990
Firstpage :
180
Lastpage :
183
Keywords :
Equations; HEMTs; Intrusion detection; Laboratories; Microelectronics; Parameter extraction; SPICE; Silicon; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Measurement Techniques for Microwave Device Characterization and Modelling, 1990. Digest of Papers. 1990 Workshop on
Conference_Location :
Stuttgart, Germany
Type :
conf
DOI :
10.1109/MDCM.1990.666361
Filename :
666361
Link To Document :
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