Silicon microcavity based on 1-D photonic bandgap structure

Author

Serpenguzel, Ali

Author_Institution

Dept. of Phys., Koc Univ., Istanbul, Turkey

fYear

2002

fDate

19-24 May 2002

Firstpage

56

Lastpage

57

Abstract

Summary form only given. We have demonstrated that a-SiN/sub x/:H microcavities with DBR mirrors can be successfully realized by PECVD, and can be used for the control of the photoluminescence (PL) in a-SiN/sub x/:H. The PL of the a-SiNx:H is both narrowed and enhanced at the microcavity resonance with respect to the PL of the bulk a-SiNx:H. This narrowing and enhancement of the PL can be understood by the redistribution of the density of optical modes due to the presence of the microcavity. The microcavity narrowing and enhancement of luminescence in a-SiN/sub x/:H opens up a variety of possibilities for optoelectronic applications such as resonant cavity enhanced light emitting diodes.

Keywords

amorphous state; distributed Bragg reflectors; hydrogen; micro-optics; microcavities; optical multilayers; optical resonators; photoluminescence; photonic band gap; plasma CVD coatings; silicon compounds; spectral line narrowing; 1-D photonic bandgap structure; DBR mirrors; PECVD; PL enhancement; PL narrowing; SiN/sub x/:H; a-SiN/sub x/:H microcavities; microcavity resonance; optical modes; optoelectronic applications; photoluminescence; resonant cavity enhanced light emitting diodes; silicon microcavity; Hydrogen; Optical resonators; Photoluminescence; Plasma CVD; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031088

Filename

1031088