Title :
InGaAsN Quantum Dots for Long Wavelength Lasers
Author :
Gao, Qiang ; Buda, Manuela ; Tan, Hark Hoe ; Jagadish, Chennupati
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
InGaAsN quantum dots (QDs) were grown on (001) GaAs substrates by metalorganic chemical vapor deposition. Edge-emitting lasers based on this QD structure were fabricated and characterized. It was found that InGaAsN is easier to form QDs than InGaAs with the same nominal In content. InGaAsN laser devices lased at much shorter wavelength compared to the photoluminescence emission.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; InGaAsN; edge-emitting lasers; metalorganic chemical vapor deposition; photoluminescence emission; quantum dots; Chemical lasers; Current measurement; Fiber lasers; Gallium arsenide; Indium gallium arsenide; MOCVD; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Temperature;
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0453-3
Electronic_ISBN :
1-4244-0453-3
DOI :
10.1109/ICONN.2006.340658
