DocumentCode
2223384
Title
GaN-InN gann diodes characteristics in biharmonic mode
Author
Storozhenko, I.P. ; Arkusha, Yu.V. ; Piskun, A.A. ; Yaroshenko, A.N.
Author_Institution
V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
248
Lastpage
249
Abstract
The results of researches of power characteristics for Gunn-diode on the base of the alloy variband semiconductor GaN-InN with different active lengths in the biharmonic mode are presented. The influence of the region between GaN and InN length, cathodes contact and frequency on the diodes efficiency is studied. The possibility of efficient operation for Gunn diodes on the second harmonic in terahertz´s range is shown.
Keywords
Gunn diodes; III-V semiconductors; gallium compounds; indium compounds; wide band gap semiconductors; GaN-InN; Gunn diode characteristics; alloy variband semiconductor; biharmonic mode; cathode contact; diode efficiency; terahertz range; Cathodes; Gallium arsenide; Gallium nitride; Harmonic analysis; Indium phosphide; Metals; Oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6068917
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