Title :
Breakdown pecularity of the shifted to source mesfet gate
Author :
Martynov, Y.B. ; Pogorelova, E.V.
Author_Institution :
Fed. State Unitary Corp. R&PC Istok, Fryazino, Russia
Abstract :
Asymmetry of the gate-source and gate-drain current-voltage characteristics is connected with anomalous gate-source active layer punch through.
Keywords :
Schottky gate field effect transistors; MESFET gate; breakdown pecularity; gate-drain current-voltage characteristics; gate-source active layer punch through; gate-source current-voltage characteristics; Current-voltage characteristics; Electronic mail; Gallium arsenide; Logic gates; MESFETs; Neodymium;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
