DocumentCode
2223693
Title
Photonic band gap materials: a semiconductor for light
Author
John, S.
Author_Institution
Dept. of Phys., Toronto Univ., Ont., Canada
fYear
2002
fDate
19-24 May 2002
Firstpage
73
Lastpage
74
Abstract
Summary form only given. I review and discuss the role of three-dimensional light localization in the development of integrated optics on a photonic crystal micro-chip. The control and selective inhibition of spontaneous emission in a three dimensional photonic band gap material offers the possibility of developing novel active devices on such a chip.
Keywords
integrated optics; photonic band gap; photonic crystals; spontaneous emission; active devices; integrated optics; photonic band gap materials; photonic crystal microchip; spontaneous emission; three dimensional photonic band gap; three-dimensional light localization; Integrated optics; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031113
Filename
1031113
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