DocumentCode
2223731
Title
Very low threshold photonic band edge lasers from free-standing triangular photonic crystal slabs
Author
Han-Youl Ryu ; Soon-Hong Kwon ; Yong-Jae Lee ; Yong-Hee Lee ; Jeong-Soo Kim
Author_Institution
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear
2002
fDate
19-24 May 2002
Firstpage
75
Abstract
Summary form only given. Recently, two-dimensional photonic crystal lasers without defect cavities have drawn much attention. The operation of theses lasers is based on the enhancement of optical density of states at photonic band edges. Since the refractive index variations of the reported lasers are very small, typically on the order of 0.1, the device size has been larger than (100 /spl mu/m). Here we report photonic band edge lasers formed in a free-standing photonic crystal slab. The effective refractive index variation in the triangular array of air hole patterns is larger than expected. Therefore, large enhancement of photon density of states at band edges is expected.
Keywords
III-V semiconductors; electronic density of states; gallium arsenide; gallium compounds; indium compounds; optical arrays; photonic band gap; photonic crystals; quantum well lasers; 100 micron; 2D photonic crystal lasers; InGaAsP; InGaAsP quantum wells; air hole patterns; band edges; defect cavities; free-standing photonic crystal slab; free-standing triangular photonic crystal slabs; photon density of states; photonic band edges; triangular array; two-dimensional photonic crystal lasers; very low threshold photonic band edge lasers; Gallium compounds; Indium compounds; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031115
Filename
1031115
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