Output power transformer load for DC-to-RF MOS-FET power inverter

Author

Ikeda, Hiroaki ; Suzuki, Taiju ; Nakahori, Tsuyoshi ; Yoshida, Hirofumi ; Shinohara, Shigenobu

Author_Institution

Shizuoka Univ., Hamamatsu, Japan

fYear

1993

fDate

15-19 Nov 1993

Firstpage

1347

Abstract

Described are considerations for the optimum load for the DC-to-RF MOSFET power inverter of full-bridge type providing the output power transformer with minimum power loss, and also measurement of the impedance parameters of the output power transformers. The minimum reflectance of the output power transformer was -20 to -30 dB at a load of 13 ohms for the 2 to 1 winding ratio on the output power transformer at 1 to 10 MHz. The input impedance and network parameters were measured from a pair of tandem connected output power transformers. The input impedance was resistive at 50 ohms at 1 to 10 MHz. The transmittance was unity over the 1 to 10 MHz frequency range

Keywords

bridge circuits; field effect transistor circuits; insulated gate field effect transistors; invertors; load (electric); power convertors; power transformers; power transistors; semiconductor switches; switching circuits; transformer testing; transformer windings; 1 to 10 MHz; 13 ohm; 50 ohm; DC-to-RF MOSFET power inverter; frequency range; full-bridge; impedance parameters measurement; input impedance; optimum load; output power transformer; power loss; reflectance; secondary windings; transmittance; Frequency; Impedance measurement; Inverters; Loss measurement; MOSFET circuits; Power MOSFET; Power generation; Power measurement; Power transformers; Reflectivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, Control, and Instrumentation, 1993. Proceedings of the IECON '93., International Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-0891-3

Type

conf

DOI

10.1109/IECON.1993.339263

Filename

339263