Title :
Towards room temperature polariton amplification in semiconductor microcavities
Author :
Saba, Mehreen ; Kundermann, S. ; Deveaud, B. ; Ciuti, Cristiano ; Staehli ; Bloch, J. ; Thierry-Mieg, V. ; Andre, R. ; Le Si Dang ; Mura, A. ; Bongiovanni, Giancarlo
Author_Institution :
Phys. Dept., Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
Summary form only given. We show that engineering the sample structure and constituent materials in order to maximize the exciton-photon coupling greatly improves the gain of the amplifier and its operating temperature. We set-up an angle-resolved pump-probe experiment in the reflection geometry, shining on to the sample 250 fs long pulses from a titanium doped sapphire laser. We report peak gain on the weak probe beam of up to 5000 in GaAs-based microcavities and demonstrate that the stimulation effect survives above liquid nitrogen temperatures, up to 120 K.
Keywords :
III-V semiconductors; binding energy; excitons; gallium arsenide; high-speed optical techniques; laser beam effects; low-temperature techniques; micro-optics; microcavities; 120 K; 250 fs; GaAs; GaAs-based microcavities; exciton binding energy; exciton-photon coupling; fs long pulses; liquid nitrogen temperatures; peak gain; polariton amplification; pump-probe experiment; reflection geometry; room temperature polariton amplification; semiconductor microcavities; weak probe beam; Excitons; Gallium compounds; Laser radiation effects; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031157
