Title :
Cross-correlation spectroscopy in a single quantum dot
Author :
Gayral, B. ; Kiraz, A. ; Falth ; Schoenfeld, W.V. ; Petroff, Pierre M. ; Lidong Zhang ; Hu, E. ; Imamoglu, A. ; Becher, Christoph
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. Recent photon correlation measurements performed on single quantum dots provide evidence for non-classical emission from these structures. We show here how this technique can be used to study multi-charged lines in quantum dots (QDs). We studied a sample of InAs/GaAs MBE grown quantum dots. Single QDs are isolated in 2 microdisks containing at most one QD. The sample is studied at 4 K in a microphotoluminescence setup for which a cw diode laser emitting at 785 nm is used. The QD we study here presents two lines (XI, X2) at low power and an additional line (XX) at higher power. From power dependent intensity measurements, we infer that X1 and X2 are related to single exciton events, whereas XX stems from biexciton recombination. This spectrum is typical of the various QDs in our sample.
Keywords :
III-V semiconductors; biexcitons; excitons; gallium arsenide; indium compounds; photoluminescence; photon correlation spectroscopy; semiconductor quantum dots; 4 K; 785 nm; InAs-GaAs; InAs/GaAs MBE grown quantum dots; additional line; biexciton recombination; cross-correlation spectroscopy; cw diode laser; higher power; low power; microdisks; microphotoluminescence setup; multi-charged lines; nonclassical emission; photon correlation measurements; power dependent intensity measurements; single exciton events; single quantum dot; two lines; Excitons; Gallium compounds; Indium compounds; Photoluminescence; Quantum dots;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031158
