Structural Materials for NEMS/MEMS Devices

Author

Huang, H. ; Wu, Y.Q. ; Winchester, K.J. ; Suvorova, A. ; Dell, J.M. ; Zou, J. ; Faraone, L.

Author_Institution

Sch. of Eng., Queensland Univ., Brisbane, Qld.

fYear

2006

fDate

3-7 July 2006

Abstract

This paper reports the characterization of low temperature PECVD thin films as structural materials for NEMS/MEMS devices. Both silicon nitride and silicon carbide films deposited at relatively low temperatures exhibited much lower mechanical properties, compared to their respective bulk counterparts. Fourier transformation infrared spectra and energy dispersion spectra of the silicon nitride films indicated that the ratios of Si-N bonds in the films were strongly influenced by the deposition temperature, which should be attributed to the increase in its mechanical properties

Keywords

mechanical properties; micromechanical devices; nanotechnology; plasma CVD; silicon compounds; wide band gap semiconductors; MEMS; NEMS; PECVD; SiC; SiN; low temperature; mechanical property; nanoindentation; structural materials; Mechanical factors; Microelectromechanical devices; Nanoelectromechanical systems; Plasma temperature; Semiconductor films; Semiconductor thin films; Silicon carbide; Sputtering; Substrates; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

1-4244-0453-3

Electronic_ISBN

1-4244-0453-3

Type

conf

DOI

10.1109/ICONN.2006.340717

Filename

4143497