• DocumentCode
    2224911
  • Title

    Silicon nanowire/Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) core-sheath heterojunction solar cells

  • Author

    Syu, Hong-Jhang ; Shiu, Shu-Chia ; Lin, Ching-Fuh

  • Author_Institution
    Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Silicon nanowire (SiNW)/Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solar cells were fabricated by solution process. The nanowires of 370 nm were coated with PEDOT:PSS. The short circuit current density and power conversion efficiency are 27.46 mA/cm2 and 8.05%, respectively.
  • Keywords
    coatings; current density; elemental semiconductors; nanofabrication; nanowires; polymers; power conversion; semiconductor heterojunctions; short-circuit currents; silicon; solar cells; PEDOT-PSS; core sheath heterojunction solar cell; poly(3,4-ethylenedioxythiophene); poly(styrenesulfonate); power conversion efficiency; short circuit current density; silicon nanowire; solution process; Arrays; Etching; Glass; Hafnium; Indium tin oxide; Photovoltaic cells; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950021
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2224911