Title :
Ultrafast laser processing of semiconductor devices
Author :
Carey, J.E. ; Pralle, M.U. ; Vineis, C.J. ; McKee, J. ; Alie, S. ; Sickler, J.W. ; Li, X. ; Jiang, J. ; Miller, D. ; Palsule, C. ; Haddad, H.
Author_Institution :
SiOnyx, Inc., Beverly, MA, USA
Abstract :
SiOnyx is developing ultrafast laser processing techniques that improve the performance of semiconductor based photodetectors, solar cells, and image sensors. Ultrafast laser processing offers the unique ability to locally engineer the structural and doping characteristics of semiconductor devices and avoid adverse side effects. Ultrafast laser processing is incorporated into a variety of devices to increase the collection of longer wavelength light and improve quantum efficiency while maintaining scalability and CMOS compatibility.
Keywords :
CMOS image sensors; doping; high-speed optical techniques; laser beam applications; photodetectors; semiconductor devices; solar cells; CMOS compatibility; devices scalability; doping; image sensors; long wavelength light; quantum efficiency; semiconductor based photodetectors; semiconductor devices; solar cells; structural properties; ultrafast laser processing; Charge coupled devices; Image sensors; Performance evaluation; Photovoltaic cells; Photovoltaic systems; Semiconductor lasers; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
