Title :
A design of CMOS voltage doubler for 1 V operation
Author :
Qi, Wang ; Bingxian, Shao
Author_Institution :
SyncMOS Semicond. Ltd. Co., Shanghai, China
Abstract :
The design of a new charge pump cell used to make a voltage doubler working under 1 V supply voltage is presented. A new idea of using a minimum-sized transistor to startup the charge pump, instead of the existing cross-coupled method, makes the charge pump cell more suitable for on-chip application because of its simpler design and smaller area. A fully integrated charge pump based on the cell is also presented
Keywords :
CMOS analogue integrated circuits; integrated circuit design; low-power electronics; mixed analogue-digital integrated circuits; voltage multipliers; 1 V; 1V operation; CMOS voltage doubler design; charge pump cell design; fully integrated charge pump; minimum-sized transistor; mixed analog digital circuits; on-chip application; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Capacitors; Charge pumps; Clocks; Integrated circuit technology; Low voltage; MOSFETs; Switches;
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
DOI :
10.1109/ICASIC.2001.982546
