• DocumentCode
    2225328
  • Title

    On-chip assembly of silicon photonic band gap crystals

  • Author

    Vlasov, Yu.A. ; Norris, D.J. ; Bo, X.Z. ; Sturm, J.C.

  • Author_Institution
    NEC Res. Inst., Princeton, NJ, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    116
  • Lastpage
    117
  • Abstract
    Summary form only given. Three-dimensional silicon photonic band gap crystals are obtained by combining planar self-assembly of colloidal spheres with standard silicon deposition techniques. This simple and inexpensive approach, which is compatible with conventional microelectronics fabrication, yields high refractive index inverted opals of controllable thickness that are integrated directly onto a silicon wafer. These photonic bandgap structures, which operate at telecommunications wavelengths, are planar single-crystals over large areas with very low defect densities.
  • Keywords
    colloidal crystals; elemental semiconductors; photonic band gap; photonic crystals; semiconductor technology; silicon; Si; Si 3D photonic band gap crystals; colloidal spheres; controllable thickness; high refractive index inverted opals; microelectronics fabrication; on-chip assembly; planar self-assembly; planar single-crystals; standard silicon deposition techniques; three-dimensional silicon photonic band gap crystals; very low defect densities; Semiconductor device fabrication; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Long Beach, CA, USA
  • Print_ISBN
    1-55752-708-3
  • Type

    conf

  • DOI
    10.1109/QELS.2002.1031183
  • Filename
    1031183