DocumentCode
2225328
Title
On-chip assembly of silicon photonic band gap crystals
Author
Vlasov, Yu.A. ; Norris, D.J. ; Bo, X.Z. ; Sturm, J.C.
Author_Institution
NEC Res. Inst., Princeton, NJ, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
116
Lastpage
117
Abstract
Summary form only given. Three-dimensional silicon photonic band gap crystals are obtained by combining planar self-assembly of colloidal spheres with standard silicon deposition techniques. This simple and inexpensive approach, which is compatible with conventional microelectronics fabrication, yields high refractive index inverted opals of controllable thickness that are integrated directly onto a silicon wafer. These photonic bandgap structures, which operate at telecommunications wavelengths, are planar single-crystals over large areas with very low defect densities.
Keywords
colloidal crystals; elemental semiconductors; photonic band gap; photonic crystals; semiconductor technology; silicon; Si; Si 3D photonic band gap crystals; colloidal spheres; controllable thickness; high refractive index inverted opals; microelectronics fabrication; on-chip assembly; planar self-assembly; planar single-crystals; standard silicon deposition techniques; three-dimensional silicon photonic band gap crystals; very low defect densities; Semiconductor device fabrication; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031183
Filename
1031183
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