Title :
Tight-binding theory of coupled quantum dots and quantum dot arrays
Author :
Aizpurua, J. ; Xie, R. ; Bryant, G.W. ; Jaskolski, W.
Author_Institution :
Atomic Phys. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Summary form only given. Revolutionary computer paradigms such as quantum computing demand the development of large arrays of coupled quantum dots. Excitons, electrons or holes in individual dots will act as qubits. Interdot coupling will provide a means to manipulate, interact, and entangle these qubits. An understanding of the electrical and optical properties of quantum dot arrays is needed. We present a theory for the electronic structure and optical properties of coupled quantum dots and periodic arrays of dots. As an example, we consider self-assembled InAs/GaAs quantum dots. We show that coupling can produce significant level shifts, reorder levels, and change state symmetries. We use an empirical tight-binding method (ETB) to calculate the electronic structure of dot arrays. The effects of geometry and coupling between dots leads to important changes in the electronic structure and optical spectra of these configurations.
Keywords :
III-V semiconductors; arrays; excitons; gallium arsenide; indium compounds; quantum computing; self-assembly; semiconductor quantum dots; tight-binding calculations; visible spectra; InAs-GaAs; change state symmetries; coupled quantum dots; electrical properties; electronic structure; electrons; empirical tight-binding method; excitons; geometry; holes; interdot coupling; level shifts; optical properties; optical spectra; periodic arrays; quantum computing; quantum dot arrays; qubits; reorder levels; self-assembled InAs/GaAs quantum dots; Arrays; Excitons; Gallium compounds; Indium compounds; Optical spectroscopy; Quantum dots;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031206