Title :
Importance of biexcitonic scattering in exciton dephasing in quantum dots
Author :
Gotoh, H. ; Kamada, Hiroki ; Saitoh, Takashi ; Ando, Hideki ; Temmyo, J.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
Abstract :
Summary form only given. The mechanism of exciton dephasing was clarified in zero-dimensional(0-D) InGaAs quantum dots by high-energy resolution single dot spectroscopy. We measured the exciton dephasing time from homogenous linewidth of excited levels of an exciton in an isolated quantum dot. Although the exciton acoustic phonon scattering has been believed to be the origin of the dephasing so far, we found that the biexcitonic scattering plays an very important role in the dephasing. This is a distinct feature of the 0-D quantum dot structure which has never been observed in 3-D, 2-D and 1-D structures.
Keywords :
III-V semiconductors; biexcitons; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; spectral line breadth; InGaAs; PL signal; biexcitonic scattering; exciton dephasing; exciton recombination; exciton-exciton interaction; high-energy resolution single dot spectra; homogenous linewidth; isolated quantum dot; self-assembled; zero-dimensional quantum dots; Excitons; Gallium compounds; Indium compounds; Photoluminescence; Quantum dots;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031248