Title :
L- and S-band 50-watt power GaAs MESFETs
Author :
Ishimura, H. ; Murayama, M. ; Arai, K. ; Saito, Y. ; Oda, Y. ; Kuroda, H.
Author_Institution :
Komukai Works, Toshiba Corp., Kawasaki, Japan
Abstract :
L- and S-band high power GaAs FETs have been developed. At 1.8 GHz, the FET delivers an output power at 1 dB gain-compression point of 42.7 W (46.3 dBm) with 13.3 dB gain and 42% power-added efficiency, and a saturated output power of 51.3 W (47.1 dBm). The developed FETs will contribute to improve the performance of microwave SSPAs used in various radar and communication systems which require higher output power and low distortion.
Keywords :
III-V semiconductors; UHF field effect transistors; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; 1.6 to 2.6 GHz; 13.3 dB; 42 percent; 42.7 to 51.3 W; GaAs; L-band; S-band; microwave SSPA application; power GaAs MESFETs; power-added efficiency; Fabrication; Gain; Gallium arsenide; MESFETs; Microwave FETs; Microwave devices; Power generation; Radar; Solid state circuits; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.510991
