Ultrafast near-field spectroscopy of single quantum dots

Author

Guenther, Thomas ; Mueller, Klaus ; Lienau, Christoph ; Elsaesser, Thomas ; Eshlaghi ; Wieck, A.

Author_Institution

Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany

fYear

2002

fDate

19-24 May 2002

Firstpage

157

Lastpage

158

Abstract

Summary form only given. We report the first ultrafast study of the nonlinear optical response of single quantum dots (QD). We demonstrate that transient differential reflectivity spectra show pronounced oscillatory structures around the ground state QD absorption resonance. These oscillations persist up to negative delay times of more than 10 ps and reflect the perturbed free induction decay of the coherent polarization of a single exciton. We investigate excitons localized at interface fluctuations of a single 5.1 nm [100] GaAs QW. Differential reflectivity spectra are recorded as a function of pump-probe delay.

Keywords

III-V semiconductors; excitons; gallium arsenide; optical coherent transients; photoluminescence; reflectivity; semiconductor quantum dots; time resolved spectra; GaAs; PL spectra; differential reflectivity spectra; interface fluctuations; localized excitons; negative delay times; nonlinear optical response; perturbed free induction decay; polarization scattering; pump-probe delay; single exciton emission peaks; single quantum dots; spectrally sharp resonances; thin quantum wells; transient differential reflectivity spectra; ultrafast near-field spectroscopy; Excitons; Gallium compounds; Optical reflection; Photoluminescence; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031250

Filename

1031250