Title :
High-resolution Rutherford backscattering spectroscopy for Nano-CMOS applications
Author :
Kimura, Kenji ; Ming, Zhao ; Nakajima, Kaoru ; Suzuki, Motofumi
Author_Institution :
Dept. of Micro Eng., Kyoto Univ., Kyoto
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
A compact high-resolution RBS (HKBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applications. The HKBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observation of high-k/Si interface using grazing-angl-esputtering-assisted HKBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO2/Si interface during oxidation of HfO2/SiO2/Si(001). These examples show that HKBS is a powerful tool for Nano-CMOS applications.
Keywords :
CMOS integrated circuits; Rutherford backscattering; elemental semiconductors; hafnium compounds; oxidation; silicon; silicon compounds; spectroscopy; HfO2-SiO2-Si; gate dielectric films; grazing-angl-esputtering-assisted HKBS; high-resolution Rutherford backscattering spectroscopy; hydrogen depth profiling; magnetic spectrometer; monolayer depth resolution; nano-CMOS applications; small accelerator; small footprint; Accelerator magnets; Backscatter; Dielectric films; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Hydrogen; Oxidation; Spectroscopy; Time measurement; Grazing angle sputtering; HfO2; High resolution RBS; Hydrogen; Interfacial layer; La2O3; Nano CMOS; Si emission;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570980
