Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9-GHz PHS standards

Author

Ono, H. ; Umemoto, Y. ; Mori, M. ; Miyazaki, M. ; Terano, A. ; Kudo, M.

Author_Institution

Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

547

Abstract

We demonstrate a power-added efficiency of 53.5% at a very low idling current of 13 mA with a drain bias of 3 V in a proposed power amplifier. This amplifier meets the standards for the 1.9 GHz Japanese Personal Handy-phone System (PHS) which requires highly linear amplifiers, and this is the highest power-added efficiency and the lowest idling current so far reported. The proposed power amplifier uses a pseudomorphic high electron mobility transistor (PHEMT) which provides high transconductance, high linearity, and low idling current operation. This PHEMT was fabricated by using advanced power-device technology: the GaAs-InGaAs-GaAs PHEMT structure has a 0.35 /spl mu/m gate made using phase-shifting lithography and a high In mole ratio (0.35) InGaAs channel.

Keywords

UHF field effect transistors; UHF power amplifiers; cordless telephone systems; mobile radio; power HEMT; power field effect transistors; 0.35 micron; 1.9 GHz; 13 mA; 3 V; 53.5 percent; GaAs-InGaAs-GaAs; InGaAs channel; Japanese Personal Handy-phone System; PHEMT; PHS standards; high electron mobility transistor; highly linear amplifiers; idling current; phase-shifting lithography; power amplifier; power-added efficiency; pseudomorphic power HEMT; Electron mobility; HEMTs; High power amplifiers; Linearity; Lithography; MODFETs; Operational amplifiers; PHEMTs; Transconductance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.510993

Filename

510993