Title :
Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9-GHz PHS standards
Author :
Ono, H. ; Umemoto, Y. ; Mori, M. ; Miyazaki, M. ; Terano, A. ; Kudo, M.
Author_Institution :
Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan
Abstract :
We demonstrate a power-added efficiency of 53.5% at a very low idling current of 13 mA with a drain bias of 3 V in a proposed power amplifier. This amplifier meets the standards for the 1.9 GHz Japanese Personal Handy-phone System (PHS) which requires highly linear amplifiers, and this is the highest power-added efficiency and the lowest idling current so far reported. The proposed power amplifier uses a pseudomorphic high electron mobility transistor (PHEMT) which provides high transconductance, high linearity, and low idling current operation. This PHEMT was fabricated by using advanced power-device technology: the GaAs-InGaAs-GaAs PHEMT structure has a 0.35 /spl mu/m gate made using phase-shifting lithography and a high In mole ratio (0.35) InGaAs channel.
Keywords :
UHF field effect transistors; UHF power amplifiers; cordless telephone systems; mobile radio; power HEMT; power field effect transistors; 0.35 micron; 1.9 GHz; 13 mA; 3 V; 53.5 percent; GaAs-InGaAs-GaAs; InGaAs channel; Japanese Personal Handy-phone System; PHEMT; PHS standards; high electron mobility transistor; highly linear amplifiers; idling current; phase-shifting lithography; power amplifier; power-added efficiency; pseudomorphic power HEMT; Electron mobility; HEMTs; High power amplifiers; Linearity; Lithography; MODFETs; Operational amplifiers; PHEMTs; Transconductance; Transistors;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.510993
