Title :
Challenges for sub-10 nm CMOS devices
Author :
Mogami, Tohru ; Wakabayashi, Hitoshi
Author_Institution :
NEC Corp., Sagamihara
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
Scaling issues of nano-size MOSFETs will be discussed on the basis of sub-10 nm MOSFETs characteristics, which have been developed and confirmed switching characteristics. Understanding device limitations and developing new breakthrough technologies should be required to challenge sub-10-nm CMOS devices.
Keywords :
CMOS integrated circuits; MOSFET; nanoelectronics; CMOS devices; nano-size MOSFET; scaling issues; sub-10-nm devices; CMOS technology; Kelvin; MOSFETs; Microelectronics; Nanoscale devices; National electric code; Silicon; Temperature dependence; Tunneling; Voltage;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570982
