Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots

Summary form only given. Recent investigations of carrier relaxation dynamics in self-organized QDs have revealed that at low carrier density, the relaxation of geminately captured electrons and holes occurs on picosecond time-scale due to Coulomb scattering; however, nongeminately captured electrons relax are trapped in the dot excited state by phonon bottleneck. For understanding laser modulation dynamics, however, it is necessary to consider carrier dynamics at high density, under population inversion. Fast gain recovery due to carrier-carrier scattering is observed in an electrically pumped InAs/InGaAs QD active waveguide at room temperature. We report experiments probing the dynamics of entire gain spectrum, directly showing spectral hole-burning in ground and excited states, and revealing the relaxation due to intradot scattering and carrier-capture from continuum.