Title :
RF silicon MOS integrated power amplifier for analog cellular applications
Author :
Ngo, D. ; Dragon, C. ; Costa, J. ; Lamey, D. ; Spears, E. ; Burger, W. ; Camilleri, N.
Author_Institution :
Commun. Products Lab., Motorola Inc., Tempe, AZ, USA
Abstract :
We report the RF performance of the first integrated power amplifier using silicon MOS field effect transistors, shunt and series capacitors, transmission lines, spiral inductors, ground vias and ESD protection devices. The amplifier provided an output power of 1.5 W and 56% efficiency at a supply voltage of 5.8 V (850 MHz) with 25 dB of small signal gain and more than 10 dB input return loss.
Keywords :
MMIC power amplifiers; MOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; electrostatic discharge; elemental semiconductors; power amplifiers; protection; silicon; 1.5 W; 10 dB; 5.8 V; 56 percent; 850 MHz; ESD protection devices; MOSFET amplifier; RF performance; Si; Si MOS integrated power amplifier; analog cellular applications; spiral inductors; FETs; Inductors; MOS capacitors; Power amplifiers; Power transmission lines; Radio frequency; Radiofrequency amplifiers; Shunt (electrical); Silicon; Spirals;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.510996
