Title :
CMOS technology-based spiral inductors for RF applications
Author :
Chen, Ji ; Liou, Juin J.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Central Florida, Orlando, FL
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
In this paper, a physics-based model applicable for CMOS technology-based inductors will be developed. Our model development will cover both the symmetrical and asymmetrical inductors. In addition, an octagonal spiral pattern will be considered, but the approach applies generally to other non-circular patterns.
Keywords :
CMOS integrated circuits; inductors; CMOS technology; asymmetrical inductor; octagonal spiral pattern; radiofrequency application; spiral inductor; CMOS technology; Equivalent circuits; Inductors; Integrated circuit modeling; Q factor; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Solid state circuit design; Spirals;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570986
