Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes

Author

Ohmori, K. ; Ahmet, P. ; Shiraishi, K. ; Watanabe, H. ; Akasaka, Y. ; Yamabe, K. ; Yoshitake, M. ; Chang, K.-S. ; Green, M.L. ; Yamada, K. ; Chikyow, T.

Author_Institution

Nat. Inst. for Mater. Sci., Tsukuba

fYear

2006

fDate

Jan. 30 2006-Feb. 1 2006

Firstpage

160

Lastpage

162

Abstract

This paper reports a systematic investigation of flatband voltage (V_fb), properties for HfO₂-SiO₂-Si capacitors using metal alloy electrodes of Pt-W alloy as a means of tuning work function (WF). It was found that the value of V_fb, for W (lower WF) is retained after forming gas annealing (FGA) and oxidizing gas annealing (OGA) processes, while that for Pt (higher WF) strongly depends on the annealing condition. The difference in V_fb, between Pt and W is 0.34 V at most, which is smaller compared with the WF difference of 0.8 eV.

Keywords

CMOS integrated circuits; MOS capacitors; annealing; dielectric materials; elemental semiconductors; hafnium compounds; high-k dielectric thin films; metal-insulator boundaries; platinum alloys; silicon; silicon compounds; tungsten alloys; work function; CMOS devices; FGA; MOS capacitor; OGA; PtW-HfO₂-SiO₂-Si; flatband voltage; forming gas annealing; metal alloy electrode; oxidizing gas annealing; work function tuning; Annealing; CMOS technology; Channel bank filters; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Materials science and technology; Thermal stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano CMOS, 2006 International Workshop on

Conference_Location

Mishima

Print_ISBN

978-1-4244-0603-6

Type

conf

DOI

10.1109/IWNC.2006.4570988

Filename

4570988