Title :
Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes
Author :
Ohmori, K. ; Ahmet, P. ; Shiraishi, K. ; Watanabe, H. ; Akasaka, Y. ; Yamabe, K. ; Yoshitake, M. ; Chang, K.-S. ; Green, M.L. ; Yamada, K. ; Chikyow, T.
Author_Institution :
Nat. Inst. for Mater. Sci., Tsukuba
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
This paper reports a systematic investigation of flatband voltage (Vfb), properties for HfO2-SiO2-Si capacitors using metal alloy electrodes of Pt-W alloy as a means of tuning work function (WF). It was found that the value of Vfb, for W (lower WF) is retained after forming gas annealing (FGA) and oxidizing gas annealing (OGA) processes, while that for Pt (higher WF) strongly depends on the annealing condition. The difference in Vfb, between Pt and W is 0.34 V at most, which is smaller compared with the WF difference of 0.8 eV.
Keywords :
CMOS integrated circuits; MOS capacitors; annealing; dielectric materials; elemental semiconductors; hafnium compounds; high-k dielectric thin films; metal-insulator boundaries; platinum alloys; silicon; silicon compounds; tungsten alloys; work function; CMOS devices; FGA; MOS capacitor; OGA; PtW-HfO2-SiO2-Si; flatband voltage; forming gas annealing; metal alloy electrode; oxidizing gas annealing; work function tuning; Annealing; CMOS technology; Channel bank filters; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Materials science and technology; Thermal stability; Voltage;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570988
