Defect energy levels in HfO2

Author

Robertson, John ; Xiong, Ka

Author_Institution

Eng. Dept., Cambridge Univ., Cambridge

fYear

2006

fDate

Jan. 30 2006-Feb. 1 2006

Firstpage

175

Lastpage

179

Abstract

The energy levels of the oxygen vacancy and oxygen interstitial defects in HfO₂ are calculated using density functional methods that do not need an empirical bandgap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level nearer the HfO₂ conduction band and just above the Si gap, depending on its charge state. It is identified as the main electron trap in HfO₂. The oxygen interstitial gives levels just above the oxide valence band.

Keywords

conduction bands; defect states; density functional theory; electron traps; elemental semiconductors; energy gap; hafnium compounds; interstitials; silicon; vacancies (crystal); valence bands; HfO₂:Si; charge state; conduction band; defect energy levels; density functional methods; electron trap; empirical bandgap correction; oxygen interstitial; oxygen vacancy; valence band; Dielectrics and electrical insulation; Electron traps; Energy states; Hafnium oxide; High-K gate dielectrics; Leakage current; Linear discriminant analysis; Paramagnetic resonance; Photonic band gap; Power engineering and energy; IWNC; Nano CMOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano CMOS, 2006 International Workshop on

Conference_Location

Mishima

Print_ISBN

978-1-4244-0603-6

Type

conf

DOI

10.1109/IWNC.2006.4570991

Filename

4570991