Local-property analysis for modeling of gate insulator materials

Author

Doi, Kentaro ; Nakamura, Koichi ; Tachibana, Akitomo

Author_Institution

Dept. of Micro Eng., Kyoto Univ., Kyoto

fYear

2006

fDate

Jan. 30 2006-Feb. 1 2006

Firstpage

209

Lastpage

235

Abstract

We have constructed fundamental theories for electronic properties and dielectric breakdown of gate insulator materials in nano-CMOS devices based on the Rigged QED theory and the regional density functional theory. Simulations about dielectric properties and reliability due to these theories have been carried out for SiO₂, ZrO₂, HfO₂, Zr_xSi_1-xO₂, Hf_xSi_1-xO₂, Gd_xO_y, La_xO_y, and SiO_xN_y through the modeling of nano-CMOS system such as crystal and amorphous thin films. Furthermore, we have reported development of the nucleus-electron multiple dynamics program codes following the Rigged QED theory.

Keywords

CMOS integrated circuits; electric breakdown; gadolinium compounds; hafnium compounds; insulating materials; integrated circuit modelling; integrated circuit reliability; lanthanum compounds; nanoelectronics; silicon compounds; zirconium compounds; Gd_xO_y; Hf_xSi_1-xO_z; HfO₂; La_xO_y; Rigged QED theory; SiO₂; SiO_xN_y; Zr_xSi_1-xO_z; ZrO₂; amorphous thin Elms; crystal thin Elms; dielectric breakdown; functional theory; gate insulator materials; local-property analysis; nanoCMOS devices; nucleus-electron multiple dynamics program codes; Amorphous materials; Density functional theory; Dielectric breakdown; Dielectric materials; Dielectrics and electrical insulation; Hafnium oxide; Nanoscale devices; Nanostructured materials; Reliability theory; Zirconium; Dielectric property; IWNC; La oxide; Nano CMOS; Regional density functional theory; Reliability; Rigged QED theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano CMOS, 2006 International Workshop on

Conference_Location

Mishima

Print_ISBN

978-1-4244-0603-6

Type

conf

DOI

10.1109/IWNC.2006.4570993

Filename

4570993