DocumentCode
2227098
Title
Exciton Rabi splitting in semiconductor quantum wells
Author
Phillips, M. ; Wang, H.
Author_Institution
Dept. of Phys., Oregon Univ., Eugene, OR, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
171
Abstract
Summary form only given. We report studies of exciton Rabi splitting where spectrally narrow pump and probe pulses were used. In this case, coherent spectral oscillations in pump-probe spectra can be avoided by tuning the central frequency of the probe pulse. The intensity dependence of the Rabi splitting obtained from these studies reveals a distinctly nonlinear relationship between the Rabi frequency and the applied electric field, in contrast to the linear dependence expected from mean-field based theoretical models. Pump-probe experiments were performed on a 130 /spl Aring/ GaAs/AlGaAs multiple QW sample at 10 K.
Keywords
III-V semiconductors; aluminium compounds; electroabsorption; excitons; gallium arsenide; infrared spectra; semiconductor quantum wells; 10 K; 130 A; GaAs-AlGaAs; GaAs/AlGaAs multiple QW; absorption spectra; applied electric field; exciton Rabi splitting; exciton-exciton interactions; intensity dependence; nonlinear relationship; probe pulse central frequency tuning; pump-probe spectra; spectrally narrow pump probe pulses; Aluminum compounds; Electroabsorption; Excitons; Gallium compounds; Infrared spectroscopy; Quantum wells;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031268
Filename
1031268
Link To Document