• DocumentCode
    2227098
  • Title

    Exciton Rabi splitting in semiconductor quantum wells

  • Author

    Phillips, M. ; Wang, H.

  • Author_Institution
    Dept. of Phys., Oregon Univ., Eugene, OR, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    171
  • Abstract
    Summary form only given. We report studies of exciton Rabi splitting where spectrally narrow pump and probe pulses were used. In this case, coherent spectral oscillations in pump-probe spectra can be avoided by tuning the central frequency of the probe pulse. The intensity dependence of the Rabi splitting obtained from these studies reveals a distinctly nonlinear relationship between the Rabi frequency and the applied electric field, in contrast to the linear dependence expected from mean-field based theoretical models. Pump-probe experiments were performed on a 130 /spl Aring/ GaAs/AlGaAs multiple QW sample at 10 K.
  • Keywords
    III-V semiconductors; aluminium compounds; electroabsorption; excitons; gallium arsenide; infrared spectra; semiconductor quantum wells; 10 K; 130 A; GaAs-AlGaAs; GaAs/AlGaAs multiple QW; absorption spectra; applied electric field; exciton Rabi splitting; exciton-exciton interactions; intensity dependence; nonlinear relationship; probe pulse central frequency tuning; pump-probe spectra; spectrally narrow pump probe pulses; Aluminum compounds; Electroabsorption; Excitons; Gallium compounds; Infrared spectroscopy; Quantum wells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Long Beach, CA, USA
  • Print_ISBN
    1-55752-708-3
  • Type

    conf

  • DOI
    10.1109/QELS.2002.1031268
  • Filename
    1031268