A novel resonant-type GaAs SPDT switch IC with low distortion characteristics for 1.9 GHz personal handy-phone system

Author

Kawakyu, K. ; Ikeda, Y. ; Nagaoka, M. ; Ishida, K. ; Kameyama, A. ; Nitta, T. ; Yoshimura, M. ; Kitaura, Y. ; Uchitomi, N.

Author_Institution

ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

647

Abstract

A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in Personal Handy-Phone System in the 1.9 GHz band. In combination with MESFETs with low on-resistance and high breakdown voltage, the resonant-type switch IC utilizes stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55 dB and an isolation of 35.8 dB were obtained at 1.9 GHz. The IC also achieved a second order distortion of -54.3 dBc and an adjacent channel leakage power of -66 dBc at 600 kHz apart from 1.9 GHz at 19 dBm output power.

Keywords

III-V semiconductors; UHF integrated circuits; adjacent channel interference; cordless telephone systems; electric distortion; gallium arsenide; personal communication networks; switching circuits; 0.55 dB; 1.9 GHz; 2.7 V; GaAs; adjacent channel leakage power; breakdown voltage; distortion characteristics; insertion loss; isolation; personal handy-phone system; receiver side; resonant-type SPDT switch IC; second order distortion; shunt capacitor; stacked FETs; Capacitors; FETs; Gallium arsenide; Insertion loss; Low voltage; MESFET integrated circuits; Power generation; Power supplies; Resonance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511016

Filename

511016