Title :
A new semidistributed model for the noise and scattering parameters of the M(H)MIC FETs
Author :
Abdipour, A. ; Pacaud, A
Author_Institution :
Service Radioelectr. et Electron., Ecole Superieure d´´Electr., Gif-sur-Yvette, France
Abstract :
This paper describes a rigorous and systematic procedure to derive a unified distributed FET (MESFET, HEMT) signal and noise model at centimeter and millimeter-wave frequencies that can easily be implemented in CAD routines of simulators. We have used the three coupled-line theory and for the first time, the experimental data of the device are compared with the full three coupled-line theory and three coupled-line sliced model. The original noise study using the three coupled-line theory is presented. The procedure was used for the complete small-signal characterisation of a submicrometer-gate GaAs NE710 transistor
Keywords :
HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; S-parameters; circuit CAD; circuit analysis computing; distributed parameter networks; equivalent circuits; field effect MIMIC; field effect MMIC; gallium arsenide; semiconductor device models; semiconductor device noise; transmission line theory; CAD routines; GaAs; HEMT; III-V semiconductors; MESFET; MIC FET; MMIC FET; centimeter wave frequencies; distributed FET noise model; distributed FET signal model; experimental data; millimeter wave frequencies; noise parameters; scattering parameters; semidistributed model; simulators; small-signal characterisation; submicrometer-gate NE710 transistor; three coupled line sliced model; three coupled line theory; unified signal-noise model; Distributed parameter circuits; Electrodes; Electromagnetic coupling; Equivalent circuits; FETs; Frequency; HEMTs; Impedance; Scattering parameters; Transmission line theory;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.511021
