A new semidistributed model for the noise and scattering parameters of the M(H)MIC FETs

Author

Abdipour, A. ; Pacaud, A

Author_Institution

Service Radioelectr. et Electron., Ecole Superieure d´´Electr., Gif-sur-Yvette, France

Volume

2

fYear

1995

fDate

24-27 Jul 1995

Firstpage

755

Abstract

This paper describes a rigorous and systematic procedure to derive a unified distributed FET (MESFET, HEMT) signal and noise model at centimeter and millimeter-wave frequencies that can easily be implemented in CAD routines of simulators. We have used the three coupled-line theory and for the first time, the experimental data of the device are compared with the full three coupled-line theory and three coupled-line sliced model. The original noise study using the three coupled-line theory is presented. The procedure was used for the complete small-signal characterisation of a submicrometer-gate GaAs NE710 transistor

Keywords

HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; S-parameters; circuit CAD; circuit analysis computing; distributed parameter networks; equivalent circuits; field effect MIMIC; field effect MMIC; gallium arsenide; semiconductor device models; semiconductor device noise; transmission line theory; CAD routines; GaAs; HEMT; III-V semiconductors; MESFET; MIC FET; MMIC FET; centimeter wave frequencies; distributed FET noise model; distributed FET signal model; experimental data; millimeter wave frequencies; noise parameters; scattering parameters; semidistributed model; simulators; small-signal characterisation; submicrometer-gate NE710 transistor; three coupled line sliced model; three coupled line theory; unified signal-noise model; Distributed parameter circuits; Electrodes; Electromagnetic coupling; Equivalent circuits; FETs; Frequency; HEMTs; Impedance; Scattering parameters; Transmission line theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.511021

Filename

511021