Zero power consumption Si/SiGe HBT SPDT T/R antenna switch

Author

Gotzfried, R. ; Itoh, T. ; Luy, J.F. ; Schumacher, H.

Author_Institution

Daimler-Benz AG, Ulm, Germany

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

651

Abstract

Design and performance of a new transmit/receive (T/R) antenna switch for mobile communication systems at 1.8 GHz using Si/SiGe Heterojunction Bipolar Transistors (HBT) are described. The switch is designed to be a part of a transceiver front end for DECT and DCS 1800 applications. This circuit requires no external DC bias. The insertion loss in the receive arm is <1.5 dB and the isolation >25 dB at the operating frequency.

Keywords

Ge-Si alloys; antenna accessories; bipolar transistor switches; elemental semiconductors; heterojunction bipolar transistors; land mobile radio; receiving antennas; semiconductor materials; silicon; transceivers; transmitting antennas; 1.5 dB; 1.8 GHz; DCS 1800; DECT; Si-SiGe; Si/SiGe HBT SPDT T/R antenna switch; heterojunction bipolar transistor; insertion loss; isolation; mobile communication system; transceiver front end; transmit/receive switch; zero power consumption; Communication switching; Energy consumption; Germanium silicon alloys; Heterojunction bipolar transistors; Mobile antennas; Mobile communication; Receiving antennas; Silicon germanium; Switches; Transmitting antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511024

Filename

511024