• DocumentCode
    2227427
  • Title

    Investigation of temperature dependence of contact resistance for Au-Ti-Pd2Si-n+-Si OHMIC contacts subjected to microwave irradiation

  • Author

    Belyaev, A.E. ; Boltovets, N.S. ; Konakova, R.V. ; Kudryk, Y.Y. ; Sachenko, A.V. ; Sheremet, V.N. ; Vinogradov, A.O.

  • Author_Institution
    V. Lashkaryov Inst. of Semicond. Phys., NAS of Ukraine, Kiev, Ukraine
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    669
  • Lastpage
    671
  • Abstract
    Based on a theoretical analysis of temperature dependence of contact resistance RC for Au-Ti-Pd2Si-n+-Si oh-mic contact, a current flow mechanism is proposed that explains the experimentally observed RC growth with temperature in the 100-380 K temperature range. It is shown that microwave treatment of such contacts leads to reduction of RC values spread over the wafer and decrease of RC, while RC growth with temperature in the 100-380 K temperature range retains.
  • Keywords
    contact resistance; elemental semiconductors; gold; ohmic contacts; palladium compounds; silicon; titanium; Au-Ti-Pd2Si-Si; contact resistance; current flow mechanism; microwave irradiation; microwave treatment; ohmic contacts; temperature 100 K to 380 K; temperature dependence; Contact resistance; Masers; Ohmic contacts; Silicon; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2227427