DocumentCode
2227462
Title
Bottom-up photonic crystal cavities formed by III-V nanopillar arrays
Author
Scofield, A.C. ; Shapiro, J.N. ; Lin, A. ; Williams, A.D. ; Wong, P.S. ; Liang, B.L. ; Huffaker, D.L.
Author_Institution
Dept. of Electr. Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We present the optical properties of bottom-up photonic crystal cavities formed by selective-area epitaxy of III-V nanopillars. Photoluminescence spectra demonstrates influence of the photonic band-gap on the emission. Resonant cavity modes are observed.
Keywords
III-V semiconductors; epitaxial growth; gallium arsenide; indium compounds; nanostructured materials; optical properties; photoluminescence; photonic crystals; III-V nanopillar arrays; InGaAs; bottom up photonic crystal cavities; optical properties; photoluminescence spectra; photonic bandgap; resonant cavity mode; selective area epitaxy; Cavity resonators; Indium gallium arsenide; Optical device fabrication; Optical refraction; Photonic crystals; Stimulated emission; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950123
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