A 230 watt S-band SiGe HBT

Author

Potyraj, P.A. ; Petrosky, K.J. ; Hobart, K.D. ; Kub, F.J. ; Thompson, P.E.

Author_Institution

Northrop Grumman ESSD, Baltimore, MD, USA

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

673

Abstract

Large-area Si/Si/sub 1-x/Ge/sub x/ HBTs were demonstrated with record output power at S-Band. Under pulsed conditions in class C operation, >230 W saturated power was achieved at 2.8 GHz. At 200 W the device exhibited a collector efficiency of 46% and a power gain of 6.9 dB. Devices with implanted Si bases had comparable gain and 35% efficiency at 150 W, but saturated at 180 W. For high f/sub max/ a self-aligned silicided polysilicon-emitter structure was used in conjunction with a graded Si/sub 1-x/Ge/sub x/ base. The results indicate for the first time that Si/SiGe HBTs are suitable for high power, high frequency applications.

Keywords

UHF bipolar transistors; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; silicon; 150 to 230 W; 2.8 GHz; 35 percent; 46 percent; 6.9 dB; S-band SiGe HBT; Si-SiGe; class C operation; graded Si/sub 1-x/Ge/sub x/ base.; high power HF applications; implanted Si bases; large-area Si/Si/sub 1-x/Ge/sub x/ HBTs; polysilicon-emitter structur; pulsed conditions; self-aligned silicided structure; Bipolar transistors; Costs; Frequency; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Microwave technology; Photonic band gap; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511029

Filename

511029