Study of fractal features morphology of surface HEMT GAN heterostructures on foreign substrates

It was found that as a result of self-affine (fractal) geometry of GaN / AlGaN hetero-epitaxial layers, electrons in DEG-channel HEMT-structures move not in 2D, but in 3D plane. It leads to additional scattering of electrons and the linear resistance depends on DEG-channel source-drain HEMT-transistor size. Self-affine properties of the DEG-channel depend on self-affine (fractal) geometry of GaN buffer layer surface relief, which is replicated by the heteroepitaxial layers of HEMT-structures during epitaxial growth. The strong differences between the fractal geometry of heteroepitaxial layers and the fractal geometry of the surface of the buffer layer leads to a significant increase in their area and, consequently, to changes in the morphology of the surface at the nanoscale.