Title :
Application of high power silicon carbide transistors at radar frequencies
Author :
Morse, A.W. ; Esker, P.M. ; Clarke, R.C. ; Brandt, C.D. ; Siergiej, R.R. ; Agarwal, A.K.
Author_Institution :
Electron. Sensors & Syst. Div., Northrop Grumman Corp., Baltimore, MD, USA
Abstract :
Silicon carbide (SiC) is an emerging semiconductor material which has been widely predicted to allow greatly improved transistor performance over common semiconductors such as silicon and gallium arsenide. This paper describes the characteristics of recently fabricated devices in silicon carbide, and the first application of silicon carbide transistors in high power pulsed amplifiers at radar frequencies.
Keywords :
UHF field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; SHF; SiC; UHF; high power pulsed amplifiers; high power transistors; radar frequencies; semiconductor material; Conducting materials; Dielectric breakdown; Frequency; Gallium arsenide; Pulse amplifiers; Radar applications; Semiconductor materials; Silicon carbide; Thermal conductivity; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511030
