Title :
Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers
Author :
Smowton, P.M. ; Elliott, S.N. ; Shutts, S. ; Michell, G. ; Al-Ghamdi, M.S. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
We quantitatively determine the factors that decide the threshold current temperature dependence at high temperatures in state-of-the-art InP quantum dot lasers and demonstrate a design with low threshold and reduced temperature sensitivity.
Keywords :
III-V semiconductors; indium compounds; optoelectronic devices; quantum dot lasers; InP-AlGaInP; high temperatures; low threshold; quantum dot lasers; reduced temperature sensitivity; temperature dependence; threshold current; Current density; Quantum dot lasers; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
