Title :
Ku-band 15 W single-chip HJFET power amplifier
Author :
Matsunaga, K. ; Okamoto, Y. ; Miura, I. ; Kuzuhara, Masaaki
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This paper describes record power performance of Ku-band power amplifiers fabricated with a 0.45 /spl mu/m gate GaAs-based heterojunction FET (HJFET). The developed HJFET amplifier with 25.2 mm gate periphery delivered a 41.98 dBm (15.8 W) output power with 36% power-added efficiency (PAE) and 9.6 dB linear gain at 12 GHz. This is the highest PAE, gain and output power combination achieved from a single-chip FET power amplifier at Ku-band.
Keywords :
III-V semiconductors; JFET integrated circuits; MMIC power amplifiers; field effect MMIC; field effect analogue integrated circuits; gallium arsenide; microwave power amplifiers; 0.45 micron; 12 GHz; 15 to 15.8 W; 36 percent; GaAs; GaAs-based heterojunction FET; HJFET power amplifier; Ku-band; MMIC; SHF; single-chip power amplifier; FETs; Gain; High power amplifiers; Laboratories; National electric code; Power amplifiers; Power generation; Substrates; Thermal resistance; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511035
